Elpida 25nm process 4Gbit memory grain development completed

In early August, Elpida had announced that 2Gbit memory chips manufactured using the 25nm process formally began shipping. Today, the company formally announced that the 4Gbit DDR3 SDRAM chips manufactured using the 25nm new process have been developed and the chip area is the smallest among the similar products (4Gbit DRAM particles).

The new memory chip model is EDJ4104BCBG/EDJ4108BCBG, with a bit width of 4bit/8bit respectively. Elpida said that compared to its previous 30nm process 4Gbit DDR3 memory chips, the number of chips that can be cut from a single wafer has increased by 45%. Great reduction in production costs. At the same time, the current value during operation and standby is reduced by 25-30% and 30-50%, respectively, and the maximum transmission speed can reach over 1866Mbps (ie, the memory frequency of this particle is made up to 1866MHz), the default voltage is 1.5V, and there is low Voltage 1.35V version.

Elpida said that the new memory chips will begin trial production in December this year, and it is expected that it will begin mass production and shipments in the same month.